MJD5731 datasheet(1/2 Pages) ISC

부품명	MJD5731

상세설명	isc Silicon PNP Transistor

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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isc Silicon PNP Transistor

MJD5731

www.iscsemi.com

1

FEATURES

· BVCEO > -350V

· IC = -1A

· PNP Complements to the MJD47 thru MJD50 Series

APPLICATIONS

· Audio output stages

· General amplifiers

· Switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

VCEO

Collector-Emitter peak Voltage

-350

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-1

A

ICM

Peak Pulse Current

-3

A

PD

Total Power Dissipation

15

W

TJ

Junction Temperature

-55~150

℃

Tstg

Storage Temperature

-55~150

℃

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

8.33

℃

/W

유사한 부품 번호 - MJD5731

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	MJD5731	95Kb / 8P	High Voltage PNP Silicon Power Transistors March, 2003 - Rev. 0
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