September 2, 1994

GENERAL PURPOSE AMPLIFIER APPLICATIONS

RF & MICROWAVE TRANSISTORS

.250 2LFL (S010)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER BALLASTED

.

VSWR CAPABILITY

CONDITIONS

.

HERMETIC STRIPAC® PACKAGE

.

@3.0 GHz

DESCRIPTION

The MSC83303 is a common base hermetically

sealed silicon NPN microwave power transistor

utilizing an overlay, emitter site ballasted geome-

try with a refractory/gold metallization system.

This device is capable of withstanding an infinite

load VSWR at any phase angle under rated con-

ditions. The MSC83303 is designed for Class C

amplifier/oscillator applications in the 1.0 - 3.0

GHz frequency range.

PIN CONNECTION

BRANDING

83303

ORDER CODE

MSC83303

= 25°C)

Symbol

Parameter

Value

Uni t

Power Dissipation*

≤ 50°C)

10.0

W

Device Current*

540

mA

Collector-Supply Voltage*

30

V

Junction Temperature

200

°C

Storage Temperature

− 65 to +200

°C

Junction-Case Thermal Resistance*

12

°C/W

*Applies only to rated RF amplifier operation

MSC83303

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/5