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MTP3055E 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 MTP3055E
상세설명  N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET
PDF  8 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

MTP3055E 데이터시트(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-s
T l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
3.75
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
12
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =25 V)
50
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS =0
60
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating x0.8
Tc =125
oC
1
10
µA
µA
IGSS
Gat e-body Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VGS(th)
Gat e Threshold Voltage VDS =VGS
ID = 250
µA2
2.9
4
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V
ID =7 A
0.1
0.15
Ω
ID(o n)
On State Drain Current
VDS >ID(o n) xRDS(on )max
VGS =10 V
12
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS >ID(o n) xRDS(on )max
ID =6 A
4
6
S
Ciss
Coss
Crss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
760
100
30
pF
pF
pF
MTP3055E
2/8



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