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YG882C02R 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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YG882C02R 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Schottky Rectifiers Diode YG882C02R www.iscsemi.com 1 FEATURES · Low VF · Super high speed switching · High reliability by planer design APPLICATIONS · High speed power Switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak repetitive Reverse voltage 20 V VRMS RMS Voltage 20 V IF(AV) Average Forward Rectified Current 16 A IFSM Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimosed on Rated Load 120 A TJ Junction temperature 125 ℃ Tstg storage temperature -40~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance, junction-to-case 3.5 ℃ /W ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF Forward voltage IF= 4A -- 0.39 V IR Reverse leakage current VR = 20V -- 10 mA |
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