STTH10R04 datasheet(3/11 Pages) STMICROELECTRONICS

3 / 11 page

STTH10R04

Characteristics

3/11

Figure 1.

Conduction losses versus

average forward current

Figure 2.

Forward voltage drop versus

forward current

468

d=0.05

d=0.1

d=0.2

d=0.5

d=1

IF(av) (A)

P (W)

100

120

140

160

180

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

j=125°C

(Maximum values)

j=125°C

(Typical values)

j=25°C

(Maximum values)

(V)

(A)

Figure 3.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 4.

Relative variation of thermal

impedance junction to case versus

pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

th(j-c)/Rth(j-c)

Single pulse

D²PAK

DPAK

tP(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

th(j-c)/Rth(j-c)

Single pulse

TO-220FPAC

tP(s)

Figure 5.

Peak reverse recovery current

versus dIF/dt (typical values)

Figure 6.

Reverse recovery time versus

dIF/dt (typical values)

100

150

200

250

300

350

400

450

500

F=IF(AV)

R=200V

j=125°C

(A)

dI /dt(A/µs)

100

150

200

250

300

350

400

450

500

F=IF(AV)

R=200V

j=125°C

t (ns)

dI /dt(A/µs)

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