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S2516DH 데이터시트(PDF) 1 Page - STMicroelectronics |
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S2516DH 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() S25xxxH ® January 1995 SCR Symbol Parameter Value Unit IT(RMS) RMS on-state current (180 ° conduction angle) Tc= 85 °C25 A IT(AV) Average on-state current (180 ° conduction angle) Tc= 85 °C16 A ITSM Non repetitive surge peak on-state current (Tj initial = 25 °C) tp = 8.3 ms 270 A tp = 10 ms 250 I 2t I 2t Value for fusing tp = 10 ms 310 A 2s dI/dt Critical rate of rise of on-state current IG = 100 mA diG /dt = 1 A/ µs. 100 A/ µs Tstg Tj Storage and operating junction temperature range - 40, + 150 - 40, + 125 °C Tl Maximum lead temperature for soldering during 10s at 4.5mm from case 260 °C ABSOLUTE RATINGS (limiting values) TO220 non-insulated (Plastic) IT(RMS) =25A VDRM = 200V to 800V High surge current capability FEATURES Symbol Parameter Voltage Unit BD M N VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 200 400 600 800 V The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. DESCRIPTION K G A 1/5 |
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