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DSB30C30PB 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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DSB30C30PB 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Schottky Rectifiers Diode DSB30C30PB www.iscsemi.com 1 FEATURES · Very low VF · High reliability circuit operation · Extremely low switching losses APPLICATIONS · Free wheeling diode in low voltage converters · SMPS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak repetitive Reverse voltage 30 V IF(AV) Average Rectified Forward Current 50% duty cycle @TC=135℃, rectangular wave form 15*2 A IFSM Peak One Cycle Non-Repetitive Surge Current(Per Leg) 10 ms, Half Sine pulse, TJ=25°C 340 A Ptot Total power dissipation 70 W TJ Junction temperature -55~150 ℃ Tstg storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance, junction-to-case 1.75 ℃ /W ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF Forward voltage(Per Leg) IF= 15A,Pulse -- 0.55 V IR Reverse leakage current(Per Leg) VR = Rated VR -- 10 mA Pulse width < 300 μs, duty cycle < 2% |
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