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IPA65R095C7 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 IPA65R095C7
상세설명  isc N-Channel MOSFET Transistor
PDF  5 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IPA65R095C7 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited

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isc N-Channel MOSFET Transistor
IPA65R095C7
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）
SYMBO
L
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage VGS= 0V; ID= 1mA
650
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS= 650V; VGS= 0V
--
--
1.0
uA
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0V
--
--
±
100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID= 0.59mA
2.5
--
4.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 11.8A
--
--
95
mΩ
VSD
Forward On-Voltage
IS= 11.8A; VGS= 0V
--
--
1.5
V
RG
Gate resistance
f=1MHz, open drain
--
3.0
--
Ω
Ciss
Input Capacitance
VGS=0,VDS=400V,f=250kHz
--
2424
--
pF
Coss
Output Capacitance
--
45
--
Crss
Reverse Transfer Capacitance
--
8
--
Qg
Total Gate Charge
VDD=400V,ID=15A,VGS=0~10
V
--
52
--
nC
Qgs
Gate-Source Charge
--
13
--
Qgd
Gate-Drain Charge
--
20
--
td(on)
Turn-on Delay time
VDD=400V,ID=15A,RG=25Ω
--
58
--
ns
tr
Turn-on Rise time
--
66
--
td(off)
Turn-off Delay time
--
133
--
tf
Turn-off Fall time
--
47
--
trr
Reverse Recovery Time
VR=400V,IF=15A,diF/dt=100A
/us
--
296
--
ns
Qrr
Reverse Recovery Charge
--
3.8
--
uC



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