AVIONICS APPLICATIONS

RF & MICROWAVE TRANSISTORS

. 400 x .500 2LFL (M112)

hermetically sealed

.

DESIGNED FOR HIGH POWER PULSED

IFF AND DME APPLICATIONS

.

400 (min.) DME 1025 - 1150 MHz

.

6.5 dB MIN. GAIN

.

REFRACTORY GOLD METALLIZATION

.

EMITTER BALLASTING AND LOW

THERMAL RESISTANCE FOR

RELIABILITY AND RUGGEDNESS

.

30:1 LOAD VSWR CAPABILITY AT

SPECIFICIED OPERATING CONDITIONS

.

INPUT/OUTPUT MATCHED, COMMON

BASE CONFIGURATION

DESCRIPTION

The SD1541-01 is a hermetically sealed, gold me-

tallized, silicon NPN power transistor. The SD1541-

01 is designed for applications requiring high peak

power and low duty cycles such as DME. The

SD1541-01 is packaged in a hermetic metal/ce-

ramic package with internal input/output matching,

resulting in improved broadband performance and

a low thermal resistance.

PIN CONNECTION

BRANDING

SD1541-1

ORDER CODE

SD1541-01

= 25°C)

Symbol

Parameter

Value

Uni t

Collector-Base Voltage

65

V

Collector-Emitter Voltage

65

V

Emitter-Base Voltage

3.5

V

Device Current

22

A

Power Dissipation

1458

W

Junction Temperature

+200

°C

Storage Temperature

− 65 to +150

°C

Junction-Case Thermal Resistance

0.12

°C/W

SD1541-01

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

November 1992

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