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STB80PF55 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STB80PF55
상세설명  P-channel 55V - 0.016Ω - 80A - TO-220 - D2PAK STripFET™II Power MOSFET
PDF  13 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB80PF55 데이터시트(HTML) 5 Page - STMicroelectronics

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STB80PF55 - STP80PF55
Electrical characteristics
5/13
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=25V, ID=40A,
RG=4.7Ω, VGS=10V
(see Figure 13)
35
190
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=25V, ID=40A,
RG=4.7Ω, VGS=10V
(see Figure 13)
165
80
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Vclamp=40V, ID=80A,
RG=4.7Ω, VGS=10V
(see Figure 13)
60
40
85
ns
ns
ns
Table 6.
Source drain diode
Symbol
Parameter
Test condictions
Min
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by Tjmax
Source-drain current
Source-drain current (pulsed)
10
40
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage
ISD = 80A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80A, di/dt = 100A/µs
VDD = 25V, Tj =150°C
110
495
9
ns
µC
A



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