ADP7159ACPZ-01-R7 datasheet(19/23 Pages) AD

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Data Sheet

ADP7159

Rev. B | Page 19 of 23

100

120

140

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

TOTAL POWER DISSIPATION (W)

6400mm2

500mm2

25mm2

TJ MAXIMUM

Figure 58. Junction Temperature vs. Total Power Dissipation for

the 8-Lead SOIC, TA = 25°C

100

110

120

130

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

TOTAL POWER DISSIPATION (W)

6400mm2

500mm2

25mm2

TJ MAXIMUM

Figure 59. Junction Temperature vs. Total Power Dissipation for

the 8-Lead SOIC, TA = 50°C

100

105

110

115

120

125

130

0.10.20.30.40.50.60.70.80.91.0

TOTAL POWER DISSIPATION (W)

TJ MAXIMUM

6400mm2

500mm2

25mm2

Figure 60. Junction Temperature vs. Total Power Dissipation for

the 8-Lead SOIC, TA = 85°C

Thermal Characterization Parameter (ΨJB)

When board temperature is known, use the thermal character-

ization parameter, ΨJB, to estimate the junction temperature rise

(see Figure 61 and Figure 62). Maximum junction temperature

(TJ) is calculated from the board temperature (TB) and power

dissipation (PD) using the following formula:

TJ = TB + (PD × ΨJB)

(5)

The typical value of ΨJB is 29.1°C/W for the 10-lead LFCSP

package and 30.1°C/W for the 8-lead SOIC package.

100

120

140

0.5

1.01.5

2.02.5

3.03.54.04.55.0

5.56.0

TOTAL POWER DISSIPATION (W)

TB = 25°C

TB = 50°C

TB = 65°C

TB = 85°C

TJ MAXIMUM

Figure 61. Junction Temperature vs. Total Power Dissipation for

the 10-Lead LFCSP

100

120

140

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

TOTAL POWER DISSIPATION (W)

TJ MAXIMUM

TB = 25°C

TB = 50°C

TB = 65°C

TB = 85°C

Figure 62. Junction Temperature vs. Total Power Dissipation for

the 8-Lead SOIC

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