July 19, 1994

AVIONICS APPLICATIONS

RF & MICROWAVE TRANSISTORS

.400 x .400 2LFL (S036)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

.

5:1 VSWR CAPABILITY @ 1.75 dB RF

OVERDRIVE

.

LOW THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

DESCRIPTION

The SD8250 is a high power Class C transistor

specifically designed for TACAN/DME pulsed out-

put and driver applications.

This device is designed for operation under mod-

erate pulse width and duty cycle pulse conditions

and is capable of withstanding 5:1 output VSWR

at rated RF overdrive.

Low RF thermal resistance and computerized au-

tomatic wire bonding techniques ensure high re-

liability and product consistency.

The SD8250 is supplied in the AMPAC

™ Hermetic

Metal/Ceramic package with internal Input/Output

matching structures.

PIN CONNECTION

BRANDING

STAN250A

ORDER CODE

SD8250

= 25°C)

Symbol

Parameter

Value

Uni t

Power Dissipation*

≤ 90°C)

575

W

Device Current*

20

A

Collector-Supply Voltage*

55

V

Junction Temperature (Pulsed RF Operation)

250

°C

Storage Temperature

− 65 to +200

°C

Junction-Case Thermal Resistance

(1)

0.28

°C/W

*Applies only to rated RF amplifier operation

(1) Infra-Red Scan of Hot Spot Junction Temperature at Rated RF Operating Conditions

SD8250

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/5