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SGSIF344FP 데이터시트(PDF) 1 Page - STMicroelectronics |
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SGSIF344FP 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() SGSIF344FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s HIGH VOLTAGE CAPABILITY s VERY HIGH SWITCHING SPEED s LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: s SWITCH MODE POWER SUPPLIES s HORIZONTAL DEFLECTION FOR COLOUR TVS AND MONITORS DESCRIPTION The device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. It is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors. ® INTERNAL SCHEMATIC DIAGRAM February 1999 ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Un it VCES Collect or-Emitter Volt age (VBE = 0) 1200 V VCEO Collect or-Emitter Volt age (IB = 0) 600 V VEBO Emitter-Base Volt age (IC =0) 7 V IC Collect or Current 7 A ICM Collect or Peak Current (tp <5 ms) 12 A IB Base Current 5 A IBM Base Peak Current (tp <5 ms) 8 A Ptot T otal Dissipation at Tc =25 oC40 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction T emperature 150 oC TO-220FP 1 2 3 1/6 |
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