SMP75-8

3/8

Table 4: Thermal Resistances

Symbol

Parameter

Value

Unit

Junction to ambient (with recommended footprint)

100

°C/W

Junction to leads

20

°C/W

Symbol

Parameter

Stand-off voltage

Breakdown voltage

Breakover voltage

Leakage current

Peak pulse current

Breakover current

Holding current

Continuous reverse voltage

C

Capacitance

Types

Dynamic

Static

C

max.

max.

max.

max.

max.

typ.

max.

note1

note 2

note 3

note 4

note 5

µAVµAV

V

V

mA

mA

pF

SMP75-8

2

6

5

8

20

15

800

50

60

Note 1: IR measured at VR guarantee VBR min

Note 2: see functional test circuit 1

Note 3: see test circuit 2

Note 4: see functional holding current test circuit 3

Note 5: VR = 2V bias, VRMS=1V, F=1MHz

Figure 2: Pulse waveform

Figure 3: Non repetitive surge peak on-state

current versus overload duration

100

50

%I

PP

t

t

r

p

0

t

Repetitive peak pulse current

tr = rise time (µs)

tp = pulse duration time (µs)

I

(A)

TSM

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

0

5

10

15

20

25

30

35

40

45

50

F=50Hz

Tj initial = 25°C

t(s)