| 전자부품 데이터시트 검색엔진 |
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SOA56 데이터시트(PDF) 2 Page - STMicroelectronics |
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SOA56 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj- amb • Thermal Resistance Junction-Ambient Max 350 oC/W • Mounted on a ceramic substrate area = 15 x 15 x 0.5 mm ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ICBO Collect or Cut-off Current (IE =0) VCB = -80 V -100 nA ICEO Collect or Cut-off Current (IE =0) VCE = -60 V -100 nA V( BR)CEO ∗ Collector-Emitter Breakdown Volt age (IB =0) IC =-1 mA -80 V V(BR)EBO Emitt er-Base Breakdown Volt age (IC =0) IE =-100 µA-4 V VCE(sat) ∗ Collector-Emitter Saturat ion Voltage IC =-100 mA IB =-10 mA -0.25 V VBE(on) ∗ Base-Emitter On Voltage IC =-100 mA VCE =-1 V -1.2 V hFE ∗ DC Current G ain IC =-10 mA VCE =-1 V IC =-100 mA VCE =-1 V 50 50 fT Transit ion F requency IC =-10 mA VCE = -2 V f = 100 MHz 50 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2% SOA56 2/4 |
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