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EM620FV8B 데이터시트(PDF) 1 Page - Emerging Memory & Logic Solutions Inc |
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EM620FV8B 데이터시트(HTML) 1 Page - Emerging Memory & Logic Solutions Inc |
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1 / 11 page ![]() EM620FV8B Series Low Power, 256Kx8 SRAM 1 Document Title 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft June 7, 2007 0.1 0.1 Revision Remove BYTE option information June 15, 2007 0.2 0.2 Revision Remove UB, LB information June 21, 2007 0.3 0.3 Revision Revised VOH(2.2v to 2.4v),tOH(15ns to 10ns), tOE-55(30ns to 25ns), tWP-55(45ns to 40ns), tWP-70(55ns to 50ns), tWHZ-70(25ns to 20ns), ICC(2mA to 3mA), ICC1(2mA to 3mA) July 2, 2007 0.4 0.4 Revision VIH level change from 2.0V to 2.2V Aug. 16, 2007 Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719 Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office. |
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