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L6384ED 데이터시트(PDF) 1 Page - STMicroelectronics |
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L6384ED 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 17 page ![]() October 2007 Rev 1 1/17 17 L6384E High-voltage half bridge driver Features ■ High voltage rail up to 600V ■ dV/dt immunity ±50V/nsec in full temperature range ■ Driver current capability: – 400mA source, – 650mA sink ■ Switching times 50/30 nsec rise/fall with 1nF load ■ CMOS/TTL Schmitt trigger inputs with hysteresis and pull down ■ Shut down input ■ Dead time setting ■ Under voltage lock out ■ Integrated bootstrap diode ■ Clamping on VCC ■ SO-8/DIP-8 packages Description The L6384E is an high-voltage device, manufactured with the BCD"OFF-LINE" technology. It has an Half - Bridge Driver structure that enables to drive N-channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices. Matched delays between Low and High Side Section simplify high frequency operation. Dead time setting can be readily accomplished by means of an external resistor. DIP-8 SO-8 www.st.com Figure 1. Block diagram LOGIC UV DETECTION LEVEL SHIFTER RS VCC LVG DRIVER VCC IN DT/SD VBOOT HVG DRIVER HVG H.V. LOAD OUT LVG GND D97IN518A DEAD TIME VCC Idt Vthi BOOTSTRAP DRIVER CBOOT 4 3 5 6 7 8 1 2 |
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