전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

MMBT3906 데이터시트(PDF) 2 Page - TAITRON Components Incorporated

부품명 MMBT3906
상세설명  SMD General Purpose Transistor (PNP)
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  TAITRON [TAITRON Components Incorporated]
홈페이지  http://www.taitroncomponents.com
Logo TAITRON - TAITRON Components Incorporated

MMBT3906 데이터시트(HTML) 2 Page - TAITRON Components Incorporated

  MMBT3906 Datasheet HTML 1Page - TAITRON Components Incorporated MMBT3906 Datasheet HTML 2Page - TAITRON Components Incorporated MMBT3906 Datasheet HTML 3Page - TAITRON Components Incorporated MMBT3906 Datasheet HTML 4Page - TAITRON Components Incorporated  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
Rev. A/AH 2008-05-06
MMBT3906
SMD General Purpose Transistor (PNP)
www.taitroncomponents.com
Page 2 of 4
Electrical Characteristics (T
Ambient=25ºC unless noted otherwise)
MMBT3906
Symbol
Description
Min.
Max.
Unit
Conditions
60
-
-VCE=1V, -IC=0.1mA
80
-
-VCE=1V, -IC=1mA
100
300
-VCE=1V, -IC=10mA
60
-
-VCE=1V, -IC=50mA
hFE*
D.C. Current Gain
30
-
-VCE=1V, -IC=100mA
-V(BR)CBO
Collector-Base Breakdown Voltage
40
V
-IC=10µA, IE=0
-V(BR)CEO* Collector-Emitter Breakdown Voltage
40
-
V
-IC=1mA, IB=0
-V(BR)EBO* Emitter-Base Breakdown Voltage
5.0
-
V
-IE=10µA, IC=0
-
0.25
-IC=10mA, -IB=1mA
-VCE(sat)*
Collector-Emitter Saturation Voltage
-
0.4
V
-IC=50mA, -IB=5mA
0.65
0.85
-IC=10mA, -IB=1mA
-VBE(sat)*
Base-Emitter Saturation Voltage
-
0.95
V
-IC=50mA, -IB=5mA
-ICEV
Collector-Emitter Cut-off Current
-
50
nA
-VEB=3V, -VCE=30V
-IEBV
Emitter-Base Cut-off Current
-
50
nA
-VEB=3V, -VCE=30V
fT
Current Gain-Bandwidth Product
250
-
MHz
-VCE=20V, -IC=10mA,
f=100MHz
CCBO
Collector-Base Capacitance
-
4.5
pF
-VCB=5V, IE=0,
f=100KHz
CEBO
Emitter-Base Capacitance
-
10
pF
-VEB=0.5V, IC=0
f=100KHz
NF
Noise Figure
-
4.0
dB
-VCE=5V, -IC=100µA,
RG=1KΩ,
f=10Hz to 15.7kHz
hfe
Small Signal Current Gain
100
400
-VCE=10V, -IC=1mA
f=1KHz
td
Delay Time (see Fig 1)
-
35
-IB1=1mA, -IC=10mA
tr
Rise Time (see Fig 1)
-
35
-IB1=1mA, -IC=10mA
ts
Storage Time (see Fig 2)
-
225
IB1=-IB2=1mA, -IC=10mA
tf
Fall Time (see Fig 2)
-
75
nS
IB1=-IB2=1mA, -IC=10mA
Note: *Pulse Test: Pulse Width≤ 300µs, Duty Cycle ≤2.0%



Html Pages

1 2 3 4


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com