| 전자부품 데이터시트 검색엔진 |
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ST901 데이터시트(PDF) 2 Page - STMicroelectronics |
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ST901 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 5 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (IE = 0) VCE = 500 V VCE = 500 V Tcase = 125 oC 100 0.5 µA mA ICEO Collector Cut-off Current (IB = 0) VCE = 350 V VCE = 350 V Tcase = 125 oC 100 0.5 µA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 10 µA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage IC = 10 mA L = 10 mH IB = 0 350 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 2 A IB = 20 mA 1.3 V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 A IB = 20 mA 1.8 V hFE ∗ DC Current Gain IC = 2 A VCE =2 V IC = 4 A VCE =2 V 1500 500 Functional Test VCC = 24 V Vclamp = 350 V L = 4 mH 4A ts tf INDUCTIVE LOAD Storage Time Fall Time VCC = 12 V Vclamp = 250 V L = 4 mH IC = 2 A IB = 20 mA VBE = -3 V 15 1.5 µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ST901T 2/4 |
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