ST93C06

ST93C06C

256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM

NOT FOR NEW DESIGN

June 1997

1/15

This is information on a product still in production bu t not recommended for new de signs.

AI00816B

D

VCC

ST93C06

ST93C06C

VSS

C

Q

S

ORG

Figure 1. Logic Diagram

1 MILLION ERASE/WRITE CYCLES, with

40 YEARS DATA RETENTION

DUAL ORGANIZATION: 16 x 16 or 32 x 8

BYTE/WORD and ENTIRE MEMORY

PROGRAMMING INSTRUCTIONS

SELF-TIMED PROGRAMMING CYCLE with

AUTO-ERASE

READY/BUSY SIGNAL DURING

PROGRAMMING

SINGLE 5V

±10% SUPPLY VOLTAGE

SEQUENTIAL READ OPERATION

5ms TYPICAL PROGRAMMING TIME

ENHANCED ESD/LATCH UP

PERFORMANCES for ”C” VERSION

ST93C06 and ST93C06C are replaced by

the M93C06

DESCRIPTION

The ST93C06 and ST93C06C are 256 bit Electri-

cally Erasable Programmable Memory (EEPROM)

fabricated with SGS-THOMSON’s High Endurance

Single Polysilicon CMOS technology. In the text the

two products are referred to as ST93C06.

The memory is divided into either 32 x 8 bit bytes

or 16 x 16 bit words. The organization may be

selected by a signal applied on the ORG input.

The memory is accessed through a serial input (D)

and by a set of instructions which includes Read a

byte/word, Write a byte/word, Erase a byte/word,

Erase All and Write All. ARead instruction loads the

address of the first byte/word to be read into an

internal address pointer.

S

Chip Select Input

D

Serial Data Input

Q

Serial Data Output

C

Serial Clock

ORG

Organisation Select

Supply Voltage

Ground

Table 1. Signal Names

8

1

SO8 (M)

150mil Width

8

1

PSDIP8 (B)

0.4mm Frame