ST92F120JR1T datasheet(294/320 Pages) STMICROELECTRONICS

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ST92F120 - ELECTRICAL CHARACTERISTICS

Note:

(1) Unless otherwise stated, typical data are based on TA=25°C and VDD= 5V. They are only reported for design guide lines not tested in

production. Hysteresis voltage between switching levels: characterization results - not tested.

(2) Hysteresis voltage between switching levels: characterization results - not tested.

(3) For a description of the EMR1 Register - BSZ bit refer to the External Memory Interface Chapter.

(4) Not 100% tested, guaranteed by design characterisation. The absolute sum of input overload currents on all port pins may not exceed

100 mA.

(5) Indicative values extracted from Design simulation.

VOH

Output High Level

P0[7:0]-P6[5:4]

AS-DS-RW

Push Pull, IOH= – 2mA

EMR1 Register - BSZ bit = 0 (3)

VDD – 0.8

Push Pull, IOH= – 8mA

EMR1 Register - BSZ bit = 1 (3)

VDD – 0.8

Output High Level

P1[7:0]-P2[7:4]-P2[1:0]

P3[7:1]-P4[5:0]-P5[7:0]

P6[3:0]-P7[7:0]-P8[7:0]

P9[7:0]-VPWO

Push Pull, IOH= – 2mA

EMR1 Register - BSZ bit = 0 (3)

VDD – 0.8

Push Pull, IOH= – 4mA

EMR1 Register - BSZ bit = 1 (3)

VDD – 0.8

VOL

Output Low Level

P0[7:0]-P2[3:2]-P4[7:6]

P6[5:4]-AS-DS-RW

Push Pull / Open Drain, IOL=2mA

EMR1 Register - BSZ bit = 0 (3)

0.4

Push Pull / Open Drain, IOL=8mA,

EMR1 Register - BSZ bit = 1 (3)

0.4

Output Low Level

P1[7:0]-P2[7:4]-P2[1:0]

P3[7:1]-P4[5:0]-P5[7:0]

P6[3:0]-P7[7:0]-P8[7:0]

P9[7:0]-VPWO

Push Pull / Open Drain, IOL=2mA,

EMR1 Register - BSZ bit = 0 (3)

0.4

Push Pull / Open Drain, IOL=4mA,

EMR1 Register - BSZ bit = 1 (3)

0.4

RWPU

Weak Pull-up Current

P2[7:4]-P2[1:0]-P3[7:1]

P4.5-P4[3:1]-P5.3-P6[3:0]

P7[7:0] P8[7:0]-P9[7:0]

Bidirectional Weak Pull-up

VOL =0V

100

400

µA

Weak Pull-up Current

P6[5:4]-AS-DS

Bidirectional Weak Pull-up

VOL =0V

100

200

450

µA

ILKIO

I/O Pin Input Leakage

Input/Tri-State,

0V < VIN <VDD

–1

+ 1

µA

ILKIOD

I/O Pin Open Drain Input

Leakage

Input/Tri-State,

0V < VIN <VDD

–1

+ 1

µA

ILKA/D

A/D Conv. Input Leakage

– 1

+ 1

µA

IOV

Overload Current

(4)

5mA

SRR

Slew Rate Rise

(5)

mA/ns

SRF

Slew Rate Fall

(5)

mA/ns

Symbol

Parameter

Comment

Value

Unit

Min

Typ(1)

Max

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