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ST92F120JR1T 데이터시트(PDF) 317 Page - STMicroelectronics |
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ST92F120JR1T 데이터시트(HTML) 317 Page - STMicroelectronics |
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317 / 320 page ![]() 317/320 ST92F120 - ELECTRICAL CHARACTERISTICS A/D ANALOG SPECIFICATIONS (VDD =5V ± 10%, TA = –40°C to +105°C, fINTCLK = 24MHz, unless otherwise specified) Note: (1) “1LSBideal” has a value of AVDD/256 (2) Including sample time (3) This is the internal series resistance before the sampling capacitor (4) This is a typical expected value, but not a tested production parameter. If V(i) is the value of the i-th transition level (0 ≤ i ≤ 254), the performance of the A/D converter has been evaluated as follows: OFFS ET ERROR= deviation between the actual V(0) and the ideal V(0) (=1/2 LSB) GAIN ERROR= deviation between the actual V(254) and the ideal V(254) - V(0) (ideal V(254)=AVDD-3/2 LSB) DNL ERROR= max {[V(i) - V(i-1)]/LSB - 1} INL ERROR= max {[V(i) - V(0)]/LSB - i} ABS. ACCURA CY= overall max conversion error (5) Simulated value, to be confirmed by characterisation. (6) The specified values are guaranteed only if an overload condition occurs on a maximum of 2 non-selected analog input pins and the absolute sum of input overload currents on all analog input pins does not exceed ±10 mA. Parameter Typical Minimum Maximum Units (1) Notes Conversion time 138 INTCLK (2)(6) Sample time 85 INTCLK (6) Power-up time 60 µs (6) Resolution 8 8 bits Monotonicity GUARANTEED No missing codes GUARANTEED Zero input reading 00 Hex (6) Full scale reading FF Hex (6) Offset error 0.3 0.5 LSBs (1)(4)(6) Gain error 0.6 LSBs (4)(6) DLE (Diff. Non Linearity error) 0.6 LSBs (4)(6) ILE (Int. Non Linearity error) 1.0 LSBs (4)(6) TUE (Absolute Accuracy) – 1.0 1.0 LSBs (4)(6) Input Resistance 1.3 0.8 2.7 k Ω (3)(5)(6) Hold Capacitance 1.4 pF (5)(6) Input Leakage ±1 µA (6) 1 |
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