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ST92F120JR1T 데이터시트(PDF) 317 Page - STMicroelectronics

부품명 ST92F120JR1T
상세설명  8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPD
PDF  320 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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ST92F120JR1T 데이터시트(HTML) 317 Page - STMicroelectronics

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ST92F120 - ELECTRICAL CHARACTERISTICS
A/D ANALOG SPECIFICATIONS
(VDD =5V ± 10%, TA = 40°C to +105°C, fINTCLK = 24MHz, unless otherwise specified)
Note:
(1) “1LSBideal” has a value of AVDD/256
(2) Including sample time
(3) This is the internal series resistance before the sampling capacitor
(4) This is a typical expected value, but not a tested production parameter.
If V(i) is the value of the i-th transition level (0
≤ i ≤ 254), the performance of the A/D converter has been evaluated as follows:
OFFS ET ERROR= deviation between the actual V(0) and the ideal V(0) (=1/2 LSB)
GAIN ERROR= deviation between the actual V(254) and the ideal V(254) - V(0) (ideal V(254)=AVDD-3/2 LSB)
DNL ERROR= max {[V(i) - V(i-1)]/LSB - 1}
INL ERROR= max {[V(i) - V(0)]/LSB - i}
ABS. ACCURA CY= overall max conversion error
(5) Simulated value, to be confirmed by characterisation.
(6) The specified values are guaranteed only if an overload condition occurs on a maximum of 2 non-selected analog input pins and the
absolute sum of input overload currents on all analog input pins does not exceed
±10 mA.
Parameter
Typical
Minimum
Maximum
Units (1)
Notes
Conversion time
138
INTCLK
(2)(6)
Sample time
85
INTCLK
(6)
Power-up time
60
µs
(6)
Resolution
8
8
bits
Monotonicity
GUARANTEED
No missing codes
GUARANTEED
Zero input reading
00
Hex
(6)
Full scale reading
FF
Hex
(6)
Offset error
0.3
0.5
LSBs
(1)(4)(6)
Gain error
0.6
LSBs
(4)(6)
DLE (Diff. Non Linearity error)
0.6
LSBs
(4)(6)
ILE (Int. Non Linearity error)
1.0
LSBs
(4)(6)
TUE (Absolute Accuracy)
1.0
1.0
LSBs
(4)(6)
Input Resistance
1.3
0.8
2.7
k
(3)(5)(6)
Hold Capacitance
1.4
pF
(5)(6)
Input Leakage
±1
µA
(6)
1



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