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EM641FV8FS 데이터시트(PDF) 7 Page - Emerging Memory & Logic Solutions Inc

부품명 EM641FV8FS
상세설명  512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
PDF  10 Pages
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제조업체  EMLSI [Emerging Memory & Logic Solutions Inc]
홈페이지  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EM641FV8FS 데이터시트(HTML) 7 Page - Emerging Memory & Logic Solutions Inc

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EM641FV8FS Series
Low Power, 512Kx8 SRAM
7
merging Memory & Logic Solutions Inc.
merging Memory & Logic Solutions Inc.
tWR(4)
tWC
Address
CS
WE
Data in
Data out
tCW (2)
tAW
tWP(1)
t
AS(3)
High-Z
tDW
tDH
High-Z
t
OW
t
WHZ
Data Undefined
TIMING WAVEFORM OF WRITE CYCLE(1) (WE CONTROLLED)
Data Valid
tWC
Address
CS
WE
Data in
Data out
tCW(2)
t
WR(4)
t
AW
tWP(1)
tDW
tDH
TIMING WAVEFORM OF WRITE CYCLE(2) (CS CONTROLLED)
tAS(3)
High-Z
High-Z
Data Valid
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(tWP) of low CS and low WE. A write begins at the latest transition among CS goes low and
WE goes low. A write ends at the earliest transition when CS goes high and WE goes high. The tWP is measured from the
beginning of write to the end of write.
2. tCW is measured from the CS going low to end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end or write to the address change. tWR applied in case a write ends as CS or WE going high.



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