MIC5022BWM datasheet(4/10 Pages) MICREL

4 / 10 page

MIC5022

Micrel, Inc.

MIC5022

July 2005

Electrical Characteristics

TA = 25°C, Gnd = 0V, VDD = 12V, Gate CL = 1500pF (IRF540 MOSFET) unless otherwise speciﬁced

Symbol

Parameter

Condition

Min

Typ

Max

Units

D.C. Supply Current

VDD = 12V, Input = 0V

2.5

VDD = 36V, Input = 0V

6.0

VDD = 12V, Input = 5V

2.4

VDD = 36V, Input = 5V

3.0

Input Threshold

0.8

1.4

2.0

Input Hysteresis

0.1

Input Pull-Down Current

Input = 5V

µA

Enable Threshold

0.8

1.4

2.0

Enable Hysteresis

0.1

Fault Output

Fault Current = 1.6mA

0.15

0.4

Saturation Voltage

Note 1

Fault Output Leakage

Fault = 36V

–1

0.01

µA

Current Limit Thresh., Low-Side

Note 2

Current Limit Thresh., High-Side

Note 2

Gate On Voltage, High-Side

VDD = 12V, Note 3

VDD = 36V, Note 3

Gate On Voltage, Low-Side

VDD = 12V, Note 3

VDD = 36V, Note 3

tG(ON)

Gate On Time, Fixed

Sense Differential > 70mV

µs

tG(OFF)

Gate Off Time, Adjustable

Sense Differential > 70mV, CT = 0pF

µs

tDLH

Gate Turn-On Delay, High-Side

Note 4

1.4

2.0

µs

Gate Rise Time, High-Side

Note 5

0.8

1.5

µs

tDHL

Gate Turn-Off Delay, High-Side

Note 6

1.2

2.0

µs

Gate Fall Time, High-Side

Note 7

0.6

1.5

µs

tDLH

Gate Turn-On Delay, Low-Side

Note 4

1.7

2.5

µs

Gate Rise Time, Low-Side

Note 8

0.7

1.5

µs

tDHL

Gate Turn-Off Delay, Low-Side

Note 9

0.5

1.0

µs

Gate Fall Time, Low-Side

Note 10

1.0

1.5

µs

Note 1

Voltage remains low for time affected by CT.

Note 2

When using sense MOSFETs, it is recommended that RSENSE < 50Ω. Higher values may affect the sense MOSFET’s current transfer ratio.

Note 3

DC measurement.

Note 4

Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 0V to 2V.

Note 5

Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 17V.

Note 6

Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 20V (Gate on voltage) to 17V.

Note 7

Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 17V to 2V.

Note 8

Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 10V.

Note 9

Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 15V (Gate on voltage) to 10V.

Note 10 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 10V to 2V.

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