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STB19NB20 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STB19NB20
상세설명  N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
PDF  8 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB19NB20 데이터시트(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =100 V
ID = 9.5 A
RG =4.7
Ω
VGS =10 V
(see t est circuit, f igure 3)
15
15
20
20
ns
ns
Qg
Q gs
Qgd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD = 160 V
ID =19 A VGS =10 V
29
9.5
13
40
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off -volt age Rise T ime
Fall T ime
Cross-over Time
VDD =160 V
ID =19 A
RG =4.7
Ω VGS =10 V
(see t est circuit, f igure 5)
10
10
20
15
15
30
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
19
76
A
A
VSD (
∗)Forward On Voltage
ISD =19 A
VGS =0
1. 5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =19 A
di/ dt = 100 A/
µs
VDD =50 V
Tj = 150
oC
(see t est circuit, f igure 5)
210
1.5
14.5
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STB19NB20
3/8



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