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EM641FT8T 데이터시트(PDF) 4 Page - Emerging Memory & Logic Solutions Inc

부품명 EM641FT8T
상세설명  512K x8 bit Low Power Full CMOS Static RAM
PDF  11 Pages
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제조업체  EMLSI [Emerging Memory & Logic Solutions Inc]
홈페이지  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EM641FT8T 데이터시트(HTML) 4 Page - Emerging Memory & Logic Solutions Inc

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EM641FT8T Series
Low Power, 512Kx8 SRAM
4
DC ELECTRICAL CHARACTERISTICS (TA = -40oC to +85oC)
NOTES :
1.Typical values are measured at Vcc=5V, TA=25oC and not 100% tested.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=VSS to VCC
-1
-
1
uA
Output leakage current
ILO
CS=VIH or OE=VIH or WE=VIL
VIO=VSS to VCC
-1
-
1
uA
Operating power supply
ICC
IIO=0mA, CS=VIL, VIN=VIH or VIL
-
-
5
mA
Average operating current
ICC1
Cycle time=1
µs, 100% duty, IIO=0mA,
CS<0.2V, VIN<0.2V or VIN>VCC-0.2V
-
-
7
mA
ICC2
Cycle time = Min, IIO=0mA, 100% duty,
CS=VIL, VIN=VIL or VIH
45ns
-
-
65
mA
55ns
-
-
55
70ns
-
-
45
Output low voltage
VOL
IOL = 2.1mA
-
-
0.4
V
Output high voltage
VOH
IOH = -1.0mA
2.4
-
-
V
Standby Current (TTL)
ISB
CS=VIH, Other inputs=VIH or VIL
-
-
1
mA
Standby Current (CMOS)
ISB1
CS>VCC-0.2V
Other inputs = 0~VCC
(Typ. condition : VCC=5V @ 25oC)
(Max. condition : VCC=5.5V @ 85oC)
LF
-
1.51)
20
uA
RECOMMENDED DC OPERATING CONDITIONS 1)
Notes :
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +1.0 V in case of pulse width < 20ns
3. Undershoot: -1.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC2)
4.5
-
5.5
V
Ground
VSS
0
0
0
V
Input high voltage
VIH
2.2
-
VCC + 0.53)
V
Input low voltage
VIL
-0.54)
-
0.6
V
CAPACITANCE (f =1MHz, TA=25oC)
Note : Capacitance is sampled, not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Ouput capacitance
CIO
VIO=0V
-
10
pF



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