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STB20NM50FD 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STB20NM50FD
상세설명  N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmesh™ Power MOSFET With FAST DIODE
PDF  7 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB20NM50FD 데이터시트(HTML) 3 Page - STMicroelectronics

  STB20NM50FD Datasheet HTML 1Page - STMicroelectronics STB20NM50FD Datasheet HTML 2Page - STMicroelectronics STB20NM50FD Datasheet HTML 3Page - STMicroelectronics STB20NM50FD Datasheet HTML 4Page - STMicroelectronics STB20NM50FD Datasheet HTML 5Page - STMicroelectronics STB20NM50FD Datasheet HTML 6Page - STMicroelectronics STB20NM50FD Datasheet HTML 7Page - STMicroelectronics  
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STB20NM50FD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 250V, ID = 10A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
24
ns
tr
Rise Time
16
ns
Qg
Total Gate Charge
VDD = 400V, ID = 20A,
VGS = 10V
40
56
nC
Qgs
Gate-Source Charge
13
nC
Qgd
Gate-Drain Charge
19
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 400V, ID = 20A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
9ns
tf
Fall Time
8.5
ns
tc
Cross-over Time
23
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
20
A
ISDM (2)
Source-drain Current (pulsed)
80
A
VSD (1)
Forward On Voltage
ISD = 20A, VGS = 0
1.5
V
trr
Reverse Recovery Time
ISD = 20A, di/dt = 100A/µs,
VDD = 50V
(see test circuit, Figure 5)
220
ns
Qrr
Reverse Recovery Charge
1.6
µC
IRRM
Reverse Recovery Current
15
A



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