| 전자부품 데이터시트 검색엔진 |
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SCR6C60 데이터시트(PDF) 2 Page - SemiWell Semiconductor |
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SCR6C60 데이터시트(HTML) 2 Page - SemiWell Semiconductor |
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2 / 5 page ![]() Electrical Characteristics ( T C = 25 °C unless otherwise noted ) Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VAK = VDRM TC = 25 °C TC = 125 °C ─ ─ ─ ─ 10 200 ㎂ VTM Peak On-State Voltage (1) ITM = 9 A tp=380㎲ ─ ─ 1.6 V IGT Gate Trigger Current (2) VAK = 6 V(DC), RL=10 Ω TC = 25 °C ── 15 mA VGT Gate Trigger Voltage (2) VD = 6 V(DC), RL=10 Ω TC = 25 °C ── 1.5 V VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω TC = 125 °C 0.2 ── V dv/dt Critical Rate of Rise Off-State Voltage Linear slope up to VD=VDRM 67%, Gate open TJ = 125°C 200 ─ ─ V/㎲ IH Holding Current IT = 100mA, Gate Open TC = 25 °C ── 20 mA Rth(j-c) Thermal Impedance Junction to case ── 3.12 °C/W Rth(j-a) Thermal Impedance Junction to Ambient ── 89 °C/W 2/5 ※ Notes : 1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 2. RGK Current not Included in measurement. SCR6C60 |
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