SFS4936 datasheet(1/6 Pages) SEMIWELL

부품명	SFS4936

상세설명	Dual N-Channel MOSFET

PDF	6 Pages

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제조업체	SEMIWELL [SemiWell Semiconductor]

홈페이지	http://www.semiwellsemi.co.kr

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1 / 6 page

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

VDSS

Drain to Source Voltage

30

V

ID

Continuous Drain Current(@TA = 25°C)

5.8

A

IDM

Drain Current Pulsed

(Note 1)

30

A

VGS

Gate to Source Voltage

±20

V

PD

Total Power Dissipation Single Operation (TA=25°C)

2.0

W

Total Power Dissipation Single Operation (TA=70°C)

1.28

W

TSTG, TJ

Operating Junction Temperature & Storage Temperature

- 55 ~ 150

°C

TL

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

300

°C

Thermal Characteristics

Symbol

Parameter

Value

Units

Min.

Typ.

Max.

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 4)

-

62.5

°C/W

SFS4936

December, 2002. Rev. 1.

1/6

Features

■

Low RDS(on) (0.035Ω )@VGS=10V

Low RDS(on) (0.053Ω )@VGS=4.5V

■

Gate Charge (Typical 20nC)

■

Improved dv/dt Capability

■

Maximum Junction Temperature Range (150°C)

■

Available in Tape and Reel

General Description

This Power MOSFET is produced using SemiWell’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a low

gate charge with superior switching performance, and rugged

avalanche characteristics. This Power MOSFET is well suited

for Battery switch, Load switch and Motor controler.

SemiWell Semiconductor

Dual N-Channel MOSFET

8-SOIC

Symbol

G1

S1

S2

G2

D1

D2

D1

D2

D1

D2

S1

G1

G2

S2

1

2

3

4

5

6

7

8

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