DESCRIPTION

RT2P09M is a composite transistor with built-in bias resistor

FEATURE

●Built-in bias resistor ( R1=2.2 KΩ , R2=47KΩ )

●Mini package for easy mounting

APPLICATION

Inverted circuit , switching circuit , interface circuit , driver circuit

RT2P09M

COMPOSITE TRANSISTOR WITH RESISTOR

FOR SWITCHING APPLICATION

SILICON PNP EPITAXIAL TYPE

OUTLINE DRAWING

Unit:mm

（RTr1、RTr2）

Symbol

Parameter

Ratings

Unit

Collector to Base voltage

-50

V

Emitter to Base voltage

-6

V

Collector to Emitter voltage

-50

V

Collector current

-100

mA

Peak Collector current

-200

mA

Collector dissipation（Total Ta=25℃）

150

mW

Junction temperature

＋150

℃

Storage temperature

-55∼＋150

℃

TERMINAL CONNECTOR

①：BASE1

②：EMITTER（COMMON）

③：BASE2

④：COLLECTOR2

⑤：COLLECTOR1

JEITA：SC-88A

R1

R2

R1

R2

RTr2

RTr1

①

②

③

④

⑤

1.25

2.1

①

②

③

⑤

④

ISAHAYA ELECTRONICS CORPORATION

MARKING

P D

①

② ③

⑤

④