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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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RT3NDDM 데이터시트(PDF) 1 Page - Isahaya Electronics Corporation |
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RT3NDDM 데이터시트(HTML) 1 Page - Isahaya Electronics Corporation |
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1 / 3 page  DESCRIPTION RT3NDDM is a composite transistor built with two RT1N237 chips in SC-88 package. FEATURE Silicon NPN epitaxial type Built in bias resistor (R1=2.2kΩ，R2=47kΩ) Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit PRELIMINARY RT3NDDM Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit：mm MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER RATING UNIT VCBO Collector to Base voltage 50 V VEBO Emitter to Base voltage 10 V VCEO Collector to Emitter voltage 50 V IC Collector current 100 mA ICM Peak Collector current 200 mA PC Collector dissipation（Total, Ta=25℃） 150 mW Tj Junction temperature ＋ 150 ℃ Tstg Storage temperature -55∼＋150 ℃ MARKING D N D . ① ② ③ ⑥ ⑤ ④ ISAHAYA ELECTRONICS CORPORATION TERMINAL CONNECTOR ①： EMITTER1 ②： BASE1 ③： COLLECTOR2 ④： EMITTER2 ⑤： BASE2 ⑥ :COLLECTOR1 JEITA：SC-88 1.25 2.1 ① ② ③ ⑤ ④ ⑥ RTr2 RTr1 R1 R1 R2 R2 ① ② ③ ④ ⑤ ⑥ |
유사한 부품 번호 - RT3NDDM |
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유사한 설명 - RT3NDDM |
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