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STB50NE08 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STB50NE08
상세설명  N - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE” POWER MOSFET
PDF  8 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB50NE08 데이터시트(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
Turn-on Time
Rise Time
VDD =40 V
ID =25 A
RG =4.7
VGS =10 V
(see test circuit, figure 3)
37
95
50
130
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =64 V
ID =50 A
VGS =10 V
85
19
28
110
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over Time
VDD =64 V
ID =50 A
RG =4.7
Ω VGS =10 V
(see test circuit, figure 5)
12
30
50
17
40
68
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
50
200
A
A
VSD (
∗)
Forward On Voltage
ISD =50 A
VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 50 A
di/ dt = 100 A/
µs
VDD =30 V
Tj =150
oC
(see test circuit, figure 5)
100
400
8
ns
nC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STB50NE08
3/8



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