STB50NE10L datasheet(1/5 Pages) STMICROELECTRONICS

부품명	STB50NE10L

상세설명	N - CHANNEL 100V - 0.020ohm - 50A - D2PAK STripFET POWER MOSFET

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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STB50NE10L

N - CHANNEL 100V - 0.020

Ω - 50A - D2PAK

STripFET

™ POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.020

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE AT 100

oC

s

APPLICATION ORIENTED

CHARACTERIZATION

s

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

"Single

Feature

Size

™ " strip-based

process. The resulting

transistor shows extremely high packing density

for

low

on-resistance,

rugged

avalanche

characteristics and less critical alignment steps

therefore

a

remarkable

manufacturing

reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT

®

INTERNAL SCHEMATIC DIAGRAM

June 1998

1

3

D

2PAK

TO-263

(suffix "T4")

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

100

V

VGS

Gate-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc = 25

o C50

A

ID

Drain Current (continuous) at Tc = 100

oC35

A

IDM(

•)

Drain Current (pulsed)

200

A

Ptot

Total Dissipation at Tc = 25

oC150

W

Derating Factor

1

W/

oC

dv/dt (1)

Peak Diode Recovery voltage slope

6

V/ns

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

(1) ISD

≤ 50 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STB50NE10L

100 V

<0.025

Ω

50 A

1/5

유사한 부품 번호 - STB50NE10L

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STB50NE10	86Kb / 8P	N - CHANNEL 100V - 0.02ohm - 50A - D2PAK STripFET] POWER MOSFET Dec-1998
	STB50NE10	412Kb / 13P	N-channel 100V - 0.021Ω - 50A - D2PAK STripFET??Power MOSFET 26-Jun-2006
	STB50NE10T4	412Kb / 13P	N-channel 100V - 0.021Ω - 50A - D2PAK STripFET??Power MOSFET 26-Jun-2006
	STB50NE10	412Kb / 13P	N-channel 100V - 0.021Ω - 50A - D2PAK STripFET??Power MOSFET 26-Jun-2006

More results

유사한 설명 - STB50NE10L

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STB40NF10L	435Kb / 9P	N-CHANNEL 100V - 0.028Ω - 40A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET Apr-2001
	STB50NE10	86Kb / 8P	N - CHANNEL 100V - 0.02ohm - 50A - D2PAK STripFET] POWER MOSFET Dec-1998
	STP40NF10	479Kb / 11P	N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET Sep-2002
	STP50NE10L	86Kb / 8P	N - CHANNEL 100V - 0.020ohm - 50A TO-220 STripFET POWER MOSFET May-1999
	STB120NF10	393Kb / 10P	N-CHANNEL 100V - 0.009 W - 120A D2PAK/TO-220 STripFET II POWER MOSFET May-2003
	STP60NF10	227Kb / 10P	N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET May-2005
	STP50NE10	232Kb / 8P	N-channel 100V - 0.021??- 50A TO-220 STripFET™Power MOSFET Apr-1999
	STB50NE10	412Kb / 13P	N-channel 100V - 0.021Ω - 50A - D2PAK STripFET??Power MOSFET 26-Jun-2006
	STB40NF10	411Kb / 13P	N-channel 100V - 0.025廓 - 50A - D2PAK Low gate charge STripFET??II Power MOSFET 26-Jun-2006
	STB230NH03L	414Kb / 13P	N-channel 30V - 80A - D2PAK STripFET??Power MOSFET 08-Jun-2007

More results

STB50NE10L 데이터시트(PDF) 1 Page - STMicroelectronics

STB50NE10L 데이터시트(HTML) 1 Page - STMicroelectronics

유사한 부품 번호 - STB50NE10L

유사한 설명 - STB50NE10L

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