STB6NB50 datasheet(1/9 Pages) STMICROELECTRONICS

부품명	STB6NB50

상세설명	N - CHANNEL 500V - 1.35ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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STB6NB50

N - CHANNEL 500V - 1.35

Ω - 5.8A - D2PAK/I2PAK

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 1.35

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

November 1999

TYPE

VDSS

RDS(on)

ID

ST B6NB50

500 V

< 1.5

Ω

5.8 A

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

500

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

500

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC5.8

A

ID

Drain Current (continuous) at Tc =100

oC3.7

A

IDM (

•)

Drain Current (pulsed)

23.2

A

Ptot

T otal Dissipation at Tc =25

oC100

W

Derating Factor

0.8

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

4.5

V/ns

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 6A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

1

2 3

I

2PAK

TO-262

(suffix ”-1”)

1

3

D

2PAK

TO-263

(Suffix ”T4”)

1/9

유사한 부품 번호 - STB6NB50

제조업체	부품명	데이터시트	상세설명
Inchange Semiconductor ...	STB6NB50	349Kb / 2P	isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	STB6NB50-TR	1Mb / 10P	N-Channel 650V (D-S) Power MOSFET

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유사한 설명 - STB6NB50

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	IRF830	92Kb / 8P	N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET Aug-1998
	STB10NB50	85Kb / 8P	N - CHANNEL 500V - 0.55ohm - 10.6A - D2PAK PowerMESH] MOSFET Mar-1999
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	STB3NB60	90Kb / 9P	N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET Jun-1998
	STB4NB50	64Kb / 6P	N - CHANNEL 500V - 2.5ohm - 3.8A - D2PAK/I2PAK PowerMESHO MOSFET Oct-1998
	STB5NB60	93Kb / 9P	N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET Jan-2000
	STB6LNC60	422Kb / 9P	N-CHANNEL 600V - 1Ω - 5.8A D2PAK PowerMesh™ II MOSFET Oct-2001
	STB9NB60	93Kb / 9P	N - CHANNEL 600V - 0.7ohm - 9A - I2PAK/D2PAK PowerMESH MOSFET Jan-2000
	STB9NC60	461Kb / 10P	N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh™ I MOSFET Feb-2002
	STP5NC50	534Kb / 12P	N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh™ I MOSFET Dec-2002

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