STB7NB40 datasheet(1/6 Pages) STMICROELECTRONICS

부품명	STB7NB40

상세설명	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

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STB7NB40

N - CHANNEL ENHANCEMENT MODE

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.75

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

Using the latest high voltage technology, SGS-Thomson

has designed an advanced family of power Mosfets with

outstanding performances. The new patent pending strip

layout coupled with the Company’s proprietary edge

termination structure, gives the lowest RDS(on) per area,

exceptional

avalanche

and

dv/dt

capabilities

and

unrivalled gate charge and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

STB7NB40

VDS

Drain-source Volt age (VGS =0)

400

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

400

V

VGS

Gat e-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

o C7

A

ID

Drain Current (continuous) at Tc =100

oC4.4

A

IDM(

•)

Drain Current (pulsed)

28

A

Ptot

Tot al Dissipation at Tc =25

oC100

W

Derating F act or

0.8

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ ns

Tstg

Storage T emperat ure

-65 to 150

oC

Tj

Max. O perating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

October 1997

TYPE

VDSS

RDS(on)

ID

STB7NB40

400 V

< 0.9

Ω

7.0 A

1

3

D

2PAK

TO-263

(Suffix ”T4”)

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