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PRELIMINARY DATA

September 2002

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

STB90NF3LL

N-CHANNEL 30V - 0.0048

LOW GATE CHARGE STripFET™ II POWER MOSFET

s

s

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

s

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This application specific Power MOSFET is the third

genaration of STMicroelectronis unique "Single Feature

Size™" strip-based process. The resulting transistor

shows the best trade-off between on-resistance and gate

charge. When used as high and low side in buck

regulators, it gives the best performance in terms of both

conduction and switching losses. This is extremely

important for motherboards where fast switching and

high efficiency are of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC

CONVERTERS

TYPE

STB90NF3LL

30 V

< 0.0055

Ω

80 A(#)

1

3

TO-263

(Suffix “T4”)

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

(#) Value limited by wire bonding

Symbol

Parameter

Value

Unit

30

V

30

V

Gate- source Voltage

± 16

V

80

A

80

A

Drain Current (pulsed)

320

A

200

W

Derating Factor

1.3

W/°C

Storage Temperature

-55 to 175

°C

Max. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM