May 2008

Rev 2

1/7

7

2STC2510

High power NPN epitaxial planar bipolar transistor

Features

Applications

Description

The device is a NPN transistor manufactured

using new BiT-LA (Bipolar transistor for linear

amplifier) technology. The resulting transistor

shows good gain linearity behaviour.

Table 1.

Device summary

Figure 1.

Internal schematic diagram

TO-3P

1

2

3

Order code

Marking

Package

Packaging

2STC2510

2STC2510

TO-3P

Tube

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