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2STN1550 데이터시트(PDF) 3 Page - STMicroelectronics |
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2STN1550 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() 2STF1550 2STN1550 Electrical characteristics 3/8 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Note (2) Pulsed duration = 300 µs, duty cycle ≤1.5% Table 3. Electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE =0) VCB = 50V 0.1 µA IEBO Emitter cut-off current (IC =0) VEB = 4V 0.1 µA V(BR)CBO Collector-emitter breakdown voltage (IE = 0) IC = 100µA 50 V V(BR)CEO (2) Collector-emitter breakdown voltage (IB = 0) IC = 10mA 50 V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 100µA 5V VCE(sat) (2) Collector-emitter saturation voltage IC = 3A IB = 60mA IC = 3A IB = 300mA 0.3 0.25 V V VBE(sat) (2) Base-emitter saturation voltage IC = 3A IB = 300mA 1V hFE (2) DC current gain IC = 0.5A VCE = 2V IC = 2A VCE = 2V IC = 3A VCE = 2V IC = 5A VCE = 2V 280 190 120 90 CCBO Collector-base capacitance IE = 0 VCB = 10V f = 1MHz tbd pF ton toff RESISTIVE LOAD Turn-on time Turn-off time IC = 1.5A VCC = 10V IB1 = -IB2 = 150mA tbd tbd ns ns |
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