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MJD31C 데이터시트(PDF) 3 Page - STMicroelectronics |
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MJD31C 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() MJD31CT4 Electrical characteristics 3/9 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% 2.1 Electrical characteristic (curves) Table 2. Electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE =100V 20 µA ICEO Collector cut-off current (IB = 0) VCB =60V 50 µA IEBO Emitter cut-off current (IC = 0) VEB =5V 0.1 mA VCEO(sus) (1) Collector-emitter sustaining voltage (IB = 0) IC =30mA 100 V VCE(sat) (1) Collector-emitter saturation voltage IC =3A _ IB =375mA 1.2 V VBE(on) (1) Base-emitter on voltage IC =3A _ VCE=4V 1.8 V hFE DC current gain IC =1A _ _ VCE =4V IC = 3A VCE =4V 25 10 50 Figure 1. Safe operating area Figure 2. Derating curve |
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