MJD112 datasheet(1/6 Pages) STMICROELECTRONICS

부품명	MJD112

상세설명	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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MJD112

MJD117

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

s

STMicroelectronics PREFERRED

SALESTYPES

s

LOW BASE-DRIVE REQUIREMENTS

s

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

s

SURFACE-MOUNTING TO-252 (DPAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX "T4")

s

ELECTRICAL SIMILAR TO TIP112 AND

TIP117

APPLICATIONS

s

GENERAL PURPOSE SWITCHING AND

AMPLIFIER

DESCRIPTION

The MJD112 and MJD117 form complementary

PNP - NPN pairs.

They are manufactured using Epitaxial Base

technology for cost-effective performance.

®

INTERNAL SCHEMATIC DIAGRAM

R1(typ) = 7K

Ω

R2(typ) = 200

Ω

January 2003

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Emitter Voltage (IE = 0)

100

V

VCEO

Collector-Emitter Voltage (IB = 0)

100

V

VEBO

Emitter-Base Voltage (IC = 0)

5

V

IC

Collector Current

2

A

ICM

Collector Peak Current (tp < 5 ms)

4

A

IB

Base Current

0.05

A

Ptot

Total Dissipation at Tc = 25

oC20

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

For PNP type voltage and current values are negative.

1

3

DPAK

TO-252

(Suffix "T4")

1/6

유사한 부품 번호 - MJD112

제조업체	부품명	데이터시트	상세설명
Motorola, Inc	MJD112	306Kb / 6P	SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
ON Semiconductor	MJD112	147Kb / 8P	Complementary Darlington Power Transistors August, 2004 ??Rev. 5
STMicroelectronics	MJD112	84Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Sep-1997
KEC(Korea Electronics)	MJD112	394Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
Fairchild Semiconductor	MJD112	51Kb / 5P	D-PAK for Surface Mount Applications

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MJD112 데이터시트(PDF) 1 Page - STMicroelectronics

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