STD12NE06 datasheet(1/10 Pages) STMICROELECTRONICS

부품명	STD12NE06

상세설명	N - CHANNEL 60V - 0.08ohm - 12A - IPAK/DPAK SINGLE FEATURE SIZE POWER MOSFET

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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STD12NE06

N - CHANNEL 60V - 0.08

Ω - 12A - IPAK/DPAK

SINGLE FEATURE SIZE

™ POWER MOSFET

s

TYPICAL RDS(on) = 0.08

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

AVALANCHE RUGGED TECHNOLOGY

s

100 % AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

s

ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

”Single

Feature

Size

™” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

DC MOTOR CONTROL (DISK DRIVES,etc.)

s

DC-DC & DC-AC CONVERTERS

s

SYNCHRONOUS RECTIFICATION

®

INTERNAL SCHEMATIC DIAGRAM

TYPE

VDSS

RDS(on)

ID

STD12NE06

60 V

< 0.10

Ω

12 A

March 1999

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Unit

VDS

Drain-source Volt age (VGS =0)

60

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)60

V

VGS

Gat e-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

oC12

A

ID

Drain Current (continuous) at Tc =100

oC8

A

IDM(

•)

Drain Current (pulsed)

48

A

Ptot

Tot al Dissipation at Tc =25

oC35

W

Derating F act or

0.23

W /

oC

dv/ dt(1 )

Peak Diode Recovery voltage slope

6

V/ns

Tstg

Storage T emperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

3

2

1

IPAK

TO-251

(Suffix ”-1”)

1

3

DPAK

TO-252

(Suffix ”T4”)

1/10

유사한 부품 번호 - STD12NE06

제조업체	부품명	데이터시트	상세설명
Inchange Semiconductor ...	STD12NE06	360Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STD12NE06L	92Kb / 9P	N - CHANNEL 60V - 0.09ohm- 12A TO-251/TO-252 STripFET POWER MOSFET Jan-2000
VBsemi Electronics Co.,...	STD12NE06L-1	963Kb / 7P	N-Channel 60 V (D-S) MOSFET
VBsemi Electronics Co.,...	STD12NE06LT4	1,006Kb / 8P	N-Channel 60 V (D-S) MOSFET

More results

유사한 설명 - STD12NE06

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STD12NF06	443Kb / 10P	N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET??II POWER MOSFET Dec-2001
	STD12NF06L	444Kb / 10P	N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET??II POWER MOSFET Jun-2003
	STD16NE06	91Kb / 9P	N - CHANNEL 60V - 0.07ohm - 16A DPAK/IPAK STripFET POWER MOSFET Feb-2000
	STD30NF06L	461Kb / 10P	N-CHANNEL 60V - 0.022Ω - 35A DPAK/IPAK STripFET™ POWER MOSFET Jul-2002
	STD19NE06	306Kb / 9P	N-CHANNEL 60V - 0.042 W - 19A IPAK/DPAK STripFET POWER MOSFET Mar-2002
	STD16NF06L	442Kb / 11P	N-channel 60V - 0.060 - 24A - DPAK/IPAK STripFET II Power MOSFET 10-Jan-2006
ON Semiconductor	MTD2955V	74Kb / 10P	Power MOSFET 12A, 60V P-Channel DPAK April, 2004 ??Rev. 7
STMicroelectronics	STD20NF06L	416Kb / 14P	N-channel 60V - 0.032OHM - 24A - DPAK - IPAK STripFET II Power MOSFET 03-Jul-2006
	STD12NF06L	323Kb / 14P	N-channel 60V - 0.08??- 12A - DPAK - IPAK STripFET??II Power MOSFET 19-Feb-2007
	STD12NF06-1	333Kb / 14P	N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™II Power MOSFET 19-Feb-2007

More results

STD12NE06 데이터시트(PDF) 1 Page - STMicroelectronics

STD12NE06 데이터시트(HTML) 1 Page - STMicroelectronics

유사한 부품 번호 - STD12NE06

유사한 설명 - STD12NE06

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