AP2129 datasheet(7/15 Pages) BCDSEMI

7 / 15 page

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

AP2129

Data Sheet

Jul. 2008 Rev. 1. 0

BCD Semiconductor Manufacturing Limited

(CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reference Voltage

VREF

VIN=1.8V

1mA

≤IOUT≤300mA

0.748

0.8

0.816

Input Voltage

VIN

1.8

Maximum Output Current

IOUT(MAX)

450

Load Regulation

∆VOUT

∆IOUT*VOUT)

VIN-VOUT=1V,

1mA

≤IOUT≤300mA

0.6

%/A

Line Regulation

∆VOUT

∆VIN*VOUT)

VOUT+0.5V≤VIN≤6V

IOUT=30mA

0.06

%/V

Quiescent Current

VIN=VOUT+1V, IOUT=0mA

µA

Standby Current

ISTD

VIN=VOUT+1V,

VSHUTDOWN in off mode

0.1

1.0

µA

Power Supply

Rejection Ratio

PSRR

Ripple 1Vp-p

VIN=VOUT+1V

f=100Hz

f=1KHz

f=10KHz

Output Voltage

Temperature Coefficient

(

∆VOUT/VOUT)

∆T

IOUT=30mA, -40oC≤TJ≤85oC

±100

ppm/oC

Output Current Limit

ILIMIT

400

Short Current Limit

ISHORT

VOUT=0V

Soft Start Time

tUP

µs

RMS Output Noise

VNOISE

TA=25oC, 10Hz ≤f≤100kHz

µVrms

Shutdown "High" Voltage

Shutdown input voltage "High"

1.5

Shutdown "Low" Voltage

Shutdown input voltage "Low"

0.4

VOUT Discharge MOSFET

RDS(ON)

Shutdown input voltage "Low"

Ω

Shutdown Pull Down Resis-

tance

Ω

Thermal Shutdown

165

Thermal Shutdown Hysteresis

Electrical Characteristics (Continued)

AP2129-ADJ Electrical Characteristics

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