STD2NB80 datasheet(1/9 Pages) STMICROELECTRONICS

부품명	STD2NB80

상세설명	N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET

PDF	9 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

Logo

1 / 9 page

STD2NB80

N - CHANNEL 800V - 4.6

Ω - 1.9A - IPAK/DPAK

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 4.6

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL (2500 UNITS)

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

January 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

800

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

800

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC1.9

A

ID

Drain Current (continuous) at Tc =100

oC1.2

A

IDM (

•)

Drain Current (pulsed)

7.6

A

Ptot

T otal Dissipation at Tc =25

oC55

W

Derating Factor

0.44

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

4.5

V/ns

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 2A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

ST D2NB80

800 V

< 6.5

Ω

1.9 A

3

2

1

IPAK

TO-251

(Suffix ”-1”)

1

3

DPAK

TO-252

(Suffix ”T4”)

®

1/9

유사한 부품 번호 - STD2NB80

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STD2NB25	274Kb / 9P	N - CHANNEL 250V - 1.7ohm - 2A - IPAK/DPAK PowerMESH MOSFET Oct-1998
	STD2NB40	66Kb / 6P	N - CHANNEL 400V - 3.5ohm - 2A - IPAK/DPAK PowerMESH MOSFET Jul-1999
	STD2NB50	451Kb / 10P	N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh™ MOSFET Sep-2001
	STD2NB50-1	451Kb / 10P	N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh™ MOSFET Sep-2001
	STD2NB60	291Kb / 9P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Mar-1998

More results

유사한 설명 - STD2NB80

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STD1NB60	66Kb / 6P	N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET Nov-1999
	STD1NB80-	56Kb / 5P	N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET Sep-1998
	STD1NB80	66Kb / 6P	N - CHANNEL 800V - 16ohm - 1A - DPAK/IPAK PowerMESH MOSFET
	STD2NB25	274Kb / 9P	N - CHANNEL 250V - 1.7ohm - 2A - IPAK/DPAK PowerMESH MOSFET Oct-1998
	STD2NB40	66Kb / 6P	N - CHANNEL 400V - 3.5ohm - 2A - IPAK/DPAK PowerMESH MOSFET Jul-1999
	STD2NB50	451Kb / 10P	N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh™ MOSFET Sep-2001
	STD3NB50	75Kb / 6P	N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET May-1998
	STD4NB40	449Kb / 10P	N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH™ MOSFET Jun-2001
	STD7NB20	488Kb / 10P	N-CHANNEL 200V - 0.3ohm - 7A DPAK/IPAK PowerMESH™ MOSFET Jul-2002
	STB11NB40-1	245Kb / 11P	N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET 14-Apr-2004

More results

STD2NB80 데이터시트(PDF) 1 Page - STMicroelectronics

STD2NB80 데이터시트(HTML) 1 Page - STMicroelectronics

유사한 부품 번호 - STD2NB80

유사한 설명 - STD2NB80

Html Pages

1 2 3 4 5 6 7 8 9

데이터시트 다운로드

링크 URL