STD30NE06 datasheet(1/5 Pages) STMICROELECTRONICS

부품명	STD30NE06

상세설명	N - CHANNEL 60V - 0.025 ohm - 30A - DPAK STripFET POWER MOSFET

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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STD30NE06

N - CHANNEL 60V - 0.025

Ω - 30A - DPAK

STripFET

™ " POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.025

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE 100

oC

s

APPLICATION ORIENTED

CHARACTERIZATION

s

FOR TAPE & REEL AND OTHER

PACKAGING OPTIONS CONTACT SALES

OFFICES

DESCRIPTION

This Power Mosfet is the latest development of

SGS-THOMSON unique "Single Feature Size

™ "

strip-based

process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalance characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

®

INTERNAL SCHEMATIC DIAGRAM

July 1998

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

60

V

VGS

Gate-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc = 25

o C30

A

ID

Drain Current (continuous) at Tc = 100

oC21

A

IDM(

•)

Drain Current (pulsed)

120

A

Ptot

Total Dissipation at Tc = 25

oC55

W

Derating Factor

0.37

W/

oC

dv/dt

Peak Diode Recovery voltage slope

7

V/ns

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

(1) ISD

≤20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STD30NE06

60 V

< 0.03

Ω

30 A

1

3

DPAK

TO-252

(Suffix "T4")

1/5

유사한 부품 번호 - STD30NE06

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STD30NE06L	86Kb / 8P	N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET May-1999
	STD30NE06L	286Kb / 8P	N - CHANNEL 60V - 0.025 ohm - 30A TO-252 May-1999
	STD30NE06LT4	286Kb / 8P	N - CHANNEL 60V - 0.025 ohm - 30A TO-252 May-1999
VBsemi Electronics Co.,...	STD30NE06LT4	989Kb / 6P	N-Channel 60-V (D-S) MOSFET
VBsemi Electronics Co.,...	STD30NE06LT4-CMD30N06	989Kb / 6P	N-Channel 60-V (D-S) MOSFET

More results

유사한 설명 - STD30NE06

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STD10NF06L	302Kb / 7P	N-CHANNEL 60V - 0.1ohm - 10A DPAK STripFET™ POWER MOSFET Nov-2001
	STD12NF06	443Kb / 10P	N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET??II POWER MOSFET Dec-2001
	STD12NF06L	444Kb / 10P	N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET??II POWER MOSFET Jun-2003
	STD16NE06L	55Kb / 5P	N - CHANNEL 60V - 0.07 ohm - 16A - DPAK STripFET POWER MOSFET Jun-1998
	STD30NE06L	86Kb / 8P	N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET May-1999
	STD30NF03L	85Kb / 8P	N - CHANNEL 30V - 0.020 ohm - 30A DPAK STripFET POWER MOSFET Oct-1999
	STD30NF06	457Kb / 10P	N-CHANNEL 60V - 0.020 ohm - 28A IPAK/DPAK STripFET™ II POWER MOSFET Mar-2002
	STD40NF06	448Kb / 9P	N-CHANNEL 60V - 0.024 ohm - 40A DPAK STripFET™II POWER MOSFET January 2003
Intersil Corporation	RFF70N06	78Kb / 8P	25A, 60V, 0.025 Ohm, N-Channel Power MOSFET March 1999
STMicroelectronics	STD30NE06LT4	286Kb / 8P	N - CHANNEL 60V - 0.025 ohm - 30A TO-252 May-1999

More results

STD30NE06 데이터시트(PDF) 1 Page - STMicroelectronics

STD30NE06 데이터시트(HTML) 1 Page - STMicroelectronics

유사한 부품 번호 - STD30NE06

유사한 설명 - STD30NE06

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