CHA2066

10-16GHz Low Noise Amplifier

Ref. : DSCHA20664281 - 07 Oct 04

2/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Tamb = +25°C, Vd = +4V

Symbol

Parameter

Test

Condi

tions

Min

Typ

Max

Unit

Fop

Operating frequency range

10

16

Ghz

G

Gain (1)

14

16

dB

∆G

Gain flatness (1)

± 0.5

± 1.0

dB

NF

Noise figure (1)

2.0

2.5

dB

VSWRin

Input VSWR (1)

3.0:1

VSWRout

Ouput VSWR (1)

3.0:1

IP3

3rd order intercept point

20

dBm

P1dB

Output power at 1dB gain

compression

10

dBm

Id

Drain bias current (2)

45

mA

(1) These values are representative of on-wafer measurements that are made without bonding wires at

the RF ports. When the chip is attached with typical 0.3nH input and output bonding wires, the indicated

parameter values should be improved.

(2) This current is the typical value from the low noise low consumption biasing ( B & D grounded ).

Tamb = +25°C

Symbol

Parameter (1)

Values

Unit

Vd

Drain bias voltage (3)

4.5

V

Pin

Maximum peak input power overdrive (2)

+15

dBm

Top

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these paramaters may cause permanent damage.

(2) Duration < 1s.

(3) For a typical biasing circuit :