AT91SAM7S128-AI datasheet(13/32 Pages) ATMEL

13 / 32 page

AT91SAM7S128 Summary Preliminary

6116AS–ATARM–20-Oct-04

Memory

•

128 Kbytes of Flash Memory

–

512 pages of 256 bytes

–

Fast access time, 30 MHz single-cycle access in worst case conditions

–

Page programming time: 4 ms, including page auto-erase

–

Page programming without auto-erase: 2 ms

–

Full chip erase time: 10 ms

–

10,000 write cycles, 10-year data retention capability

–

8 lock bits, each protecting 8 sectors of 64 pages

–

Protection Mode to secure contents of the Flash

•

32 Kbytes of Fast SRAM

–

Single-cycle access at full speed

Memory Mapping

Internal SRAM

The AT91SAM7S128 embeds a high-speed 32-Kbyte SRAM bank. After reset and until

the Remap Command is performed, the SRAM is only accessible at address 0x0020

0000. After Remap, the SRAM also becomes available at address 0x0.

Internal Flash

The AT91SAM7S128 features one bank of 128 Kbytes of Flash. At any time, the Flash

is mapped to address 0x0010 0000. It is also accessible at address 0x0 after the reset

and before the Remap Command.

Figure 4. Internal Memory Mapping

256M Bytes

Flash Before Remap

SRAM After Remap

Undefined Areas

(Abort)

0x000F FFFF

0x001F FFFF

0x002F FFFF

0x0FFF FFFF

1 M Bytes

253 M Bytes

Internal Flash

Internal SRAM

0x0000 0000

0x0010 0000

0x0020 0000

0x0030 0000

AT91SAM7S128-AI 데이터시트(PDF) 13 Page - ATMEL Corporation

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