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STGD3NB60SD 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STGD3NB60SD
상세설명  N-CHANNEL 3A - 600V DPAK Power MESH IGBT
PDF  8 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD3NB60SD 데이터시트(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tc
tr(voff)
td(off)
tf
Eoff(**)
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
VCC = 480 V
IC = 3 A
RGE = 1 k
Ω
VGE = 15 V
1.8
1.0
3.4
0.72
1.15
µs
µs
µs
µs
mJ
tc
tr(voff)
td(off)
tf
Eoff(**)
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
VCC = 480 V
IC = 3 A
RGE = 1k
Ω
VGE = 15 V
Tj = 125
oC
2.8
1.45
3.6
1.2
1.8
µs
µs
µs
µs
mJ
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
If
Ifm
Forward Current
Forward Current pulsed
3
25
A
A
Vf
Forward On-Voltage
If = 3 A
If = 1 A
1.55
1.15
1.9
V
V
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 3 A
VR=200 V
dI/dt = 100 A/
µS
Tj = 125
oC
1700
4500
9.5
ns
nC
A
(
•) Pulse width limited by max. junction temperature
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
STGD3NB60SD
3/8



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