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STGD7NB60ST4 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 STGD7NB60ST4
상세설명  N-CHANNEL 7A - 600V DPAK Power MESH IGBT
PDF  8 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD7NB60ST4 데이터시트(HTML) 2 Page - STMicroelectronics

  STGD7NB60ST4 Datasheet HTML 1Page - STMicroelectronics STGD7NB60ST4 Datasheet HTML 2Page - STMicroelectronics STGD7NB60ST4 Datasheet HTML 3Page - STMicroelectronics STGD7NB60ST4 Datasheet HTML 4Page - STMicroelectronics STGD7NB60ST4 Datasheet HTML 5Page - STMicroelectronics STGD7NB60ST4 Datasheet HTML 6Page - STMicroelectronics STGD7NB60ST4 Datasheet HTML 7Page - STMicroelectronics STGD7NB60ST4 Datasheet HTML 8Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
2.27
100
1.5
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tj = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-Emitter
Breakdown Voltage
IC = 250
µA
VGE = 0
600
V
VBR(ECR)
Emitter-Collector
Breakdown Voltage
IC = 1 mA
VGE = 0
20
V
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating
Tj =
25
oC
VCE = Max Rating
Tj = 125
o C
10
100
µA
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE =
± 20 V
VCE = 0
± 100
nA
ON (
∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold
Voltage
VCE = VGE
IC = 250
µA
2.5
5
V
VCE(SAT)
Collector-Emitter
Saturation Voltage
VGE = 15 V
IC = 3 A
VGE = 15 V
IC = 7 A
VGE = 15 V
IC = 7 A
Tj = 125
oC
1
1.2
1.1
1.4
1.6
V
V
V
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward
Transconductance
VCE =25 V
IC = 7 A
4
S
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE = 25 V
f = 1 MHz
VGE = 0
610
65
12
780
85
15
pF
pF
pF
QG
Gate Charge
VCE = 400 V
IC = 7 A
VGE = 15 V
33
nC
ICL
Latching Current
Vclamp = 480 V
RG=1k
Ω
Tj = 150
oC
15
A
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Delay Time
Rise Time
VCC = 480 V
IC = 7 A
VGE= 15 V
RG = 1 K
Ω
0.7
0.46
µs
µs
(di/dt)on
Eon
Turn-on Current Slope
Turn-on
Switching Losses
VCC = 480 V
IC = 7 A
RG = 1 K
Ω
VGE = 15 V
Tj = 125
oC
8
0.4
A/
µs
mJ
STGD7NB60S
2/8



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