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STGD3NB60K 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STGD3NB60K
상세설명  N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMES TM IGBT
PDF  11 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD3NB60K 데이터시트(HTML) 3 Page - STMicroelectronics

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STGP3NB60K - STGD3NB60K
SWITCHING PARAMETERS
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
(#) Calculated according to the iterative formula:
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VCE =25V,Ic= 3A
2.4
S
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE =25V,f= 1MHz,VGE = 0
220
50
5.8
pF
pF
pF
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480V, IC =3A,
VGE = 15V
14
3.3
7.5
18
nC
nC
nC
tscw
Short Circuit Withstand Time
Vce =0.5 VBR(CES),VGE=15V,
Tj = 125°C, RG =10 Ω
10
µs
td(on)
tr
Turn-on Delay Time
Rise Time
VCC = 480 V, IC =3 A
RG =10Ω,VGE =15 V
14
5
ns
ns
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
VCC= 480 V, IC =3 ARG=10Ω
VGE =15 V,Tj=125°C
520
30
A/µs
µJ
tc
tr(Voff)
td(off)
tf
Eoff(**)
Ets
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Vcc =480 V, IC =3 A,
RGE =10 Ω ,VGE =15 V
Tj = 25 °C
90
20
33
100
58
85
ns
ns
ns
ns
µJ
µJ
tc
tr(Voff)
td(off)
tf
Eoff(**)
Ets
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Vcc =480 V, IC =3 A,
RGE =10 Ω ,VGE =15 V
Tj = 125 °C
190
54
90
130
111
195
ns
ns
ns
ns
µJ
µJ
I
C TC
()
T
JMAX
T
C
–
R
THJ
C
–
V
CES AT MAX
() TC IC
,
()
×
--------------------------------------------------------------------------------------
=



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