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STGD3NB60S 데이터시트(PDF) 1 Page - STMicroelectronics

부품명 STGD3NB60S
상세설명  N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH™ IGBT
PDF  10 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD3NB60S 데이터시트(HTML) 1 Page - STMicroelectronics

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August 2002
STGP3NB60S
STGD3NB60S
N-CHANNEL 3A - 600V - TO-220 / DPAK
PowerMESH™ IGBT
(q ) Pulse width limited by safe operating area
s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s
VERY LOW ON-VOLTAGE DROP (Vcesat)
s
OFF LOSSES INCLUDE TAIL CURRENT
s
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL (SMD VERSION)
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “S” identifies a family
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
APPLICATIONS
s
MOTOR CONTROL
s
LIGHT DIMMER
s
STATIC RELAYS
ABSOLUTE MAXIMUM RATINGS
TYPE
VCES
VCE(sat)
IC
STGP3NB60S
STGD3NB60S
600 V
600 V
<1.5 V
<1.5 V
3A
3A
Symbol
Parameter
Value
Unit
STGP3NB60S
STGD3NB60S
VCES
Collector-Emitter Voltage (VGS =0)
600
V
VECR
Reverse Battery Protection
20
V
VGE
Gate-Emitter Voltage
±20
V
IC
Collector Current (continuous) at TC =25°C
6A
IC
Collector Current (continuous) at TC = 100°C
3A
ICM ( )
Collector Current (pulsed)
24
A
PTOT
Total Dissipation at TC = 25°C
65
45
W
Derating Factor
0.32
W/°C
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
DPAK
1
2
3
1
3
TO-220
INTERNAL SCHEMATIC DIAGRAM


유사한 부품 번호 - STGD3NB60S

제조업체부품명데이터시트상세설명
logo
STMicroelectronics		 STGD3NB60S STMICROELECTRONICS-STGD3NB60S Datasheet
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STGD3NB60SD STMICROELECTRONICS-STGD3NB60SD Datasheet
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유사한 설명 - STGD3NB60S

제조업체부품명데이터시트상세설명
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